Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition

被引：77

作者：

Rosenthal, A

Tarre, A

Gerst, A

Sundqvist, J

Hårsta, A

Aidla, A

Aarik, J

Sammelselg, V

Uustare, T

机构：

[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

[2] Univ Uppsala, Dept Chem Mat, S-75121 Uppsala, Sweden

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期

关键词：

semiconductor gas sensors; CO sensitivity; tin dioxide; ultrathin films; epitaxy; atomic layer deposition (ALD/ALE);

D O I：

10.1016/S0925-4005(03)00236-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Undoped SnO2 thin films are grown on alpha-Al2O3(012) (r-cut sapphire) substrates by gas phase atomic layer deposition (ALD). Two precursor pairs, SnI4-O-2 and SnCl4-H2O2, both new for ALD, are used. The films have a cassiterite structure and are (101)-[010](cassiterite)parallel to(012)[100](sapphire) oriented. A good epitaxial quality and the conductivity acceptable from the standpoint of semiconductor gas sensors are achieved for ultrathin films grown from SnI4-O-2 at 600 degreesC. The sensitivity of these films to CO in air has a maximum at a thickness of about 10 nm. Response rise and decay times belonging to a several seconds interval are measured. The films are assumed to function as a single grain. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：552 / 555

页数：4

共 18 条

[1] MORPHOLOGY AND STRUCTURE OF TIO2 THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION
AARIK, J
AIDLA, A
UUSTARE, T
SAMMELSELG, V
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 148 (03) : 268 - 275
[2] LAYER-BY-LAYER GROWTH OF EPITAXIAL SNO2 ON SAPPHIRE BY REACTIVE SPUTTER DEPOSITION
CAVICCHI, RE
SEMANCIK, S
ANTONIK, MD
LAD, RJ
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (16) : 1921 - 1923
[3] ELECTRON THEORY OF THIN-FILM GAS SENSORS
GEISTLINGER, H
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1993, 17 (01) : 47 - 60
[4] Surface chemistry for atomic layer growth
George, SM
Ott, AW
Klaus, JW
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) : 13121 - 13131
[5] Fabrication and characterization of Mn doped SnO2 thin films
Kimura, H
Fukumura, T
Koinuma, H
Kawasaki, M
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3) : 265 - 267
[6] Atomic layer deposition (ALD):: from precursors to thin film structures
Leskelä, M
Ritala, M
[J]. THIN SOLID FILMS, 2002, 409 (01) : 138 - 146
[7] PORIER GE, 1993, J VAC SCI TECHNOL A, V11, P1392
[8] Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications
Rosental, A
Tarre, A
Gerst, A
Uustare, T
Sammelselg, V
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 2001, 77 (1-2) : 297 - 300
[9] THE GROWTH OF THIN, EPITAXIAL SNO2 FILMS FOR GAS SENSING APPLICATIONS
SEMANCIK, S
CAVICCHI, RE
[J]. THIN SOLID FILMS, 1991, 206 (1-2) : 81 - 87
[10] Atomic layer deposition of epitaxial and polycrystalline SnO2 films from the SnI4/O2 precursor combination
Sundqvist, J
Tarre, A
Rosental, A
Hårsta, A
[J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) : 21 - 25

← 1 2 →