Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications

被引:50
作者
Rosental, A
Tarre, A
Gerst, A
Uustare, T
Sammelselg, V
机构
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
[2] Univ Tartu, Ctr Strateg Competence, EE-51014 Tartu, Estonia
关键词
tin oxide; CO sensing; ALCVD (ALE); ultrathin layers; amorphous phase; SFM smoothness;
D O I
10.1016/S0925-4005(01)00746-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
SnO2 layers are grown from SnCl4 and H2O at 180-300 degreesC on quartz glass substrates by atomic-layer-chemical-vapor-deposition-like process. The layers are oxygen deficient, predominantly amorphous and contain chlorine residues. Their amorphization degree decreases with the growth temperature. All the layers are sensitive to CO in air. Perfectly amorphous scanning-force-microscopy-smooth ultrathin (< 10 nm) layers are grown at 180 degreesC. The gas sensitivity of the latter paves the way for monograin-equivalent conductometric sensors; the presence of a massive uniformity is favorable for sensor mechanisms studies. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:297 / 300
页数:4
相关论文
共 16 条
  • [1] The characterization of undoped SnOx thin film grown by reactive ion-assisted deposition
    Choi, WK
    Cho, JS
    Song, SK
    Jung, HJ
    Koh, SK
    Yoon, KH
    Lee, CM
    Sung, MC
    Jeong, K
    [J]. THIN SOLID FILMS, 1997, 304 (1-2) : 85 - 97
  • [2] Excimer laser deposition and characteristics of tin oxide thin films
    Dai, GR
    Jiang, XL
    Zhang, YS
    [J]. THIN SOLID FILMS, 1998, 320 (02) : 216 - 219
  • [3] Surface chemistry for atomic layer growth
    George, SM
    Ott, AW
    Klaus, JW
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) : 13121 - 13131
  • [4] Madou M.J., 1989, Chemical Sensing with Solid State Devices, P419
  • [5] ULTRATHIN HETEROEPITAXIAL SNO2 FILMS FOR USE IN GAS SENSORS
    POIRIER, GE
    CAVICCHI, RE
    SEMANCIK, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 1392 - 1395
  • [6] Atomic-layer-deposited TiO2 dielectric coatings
    Rosental, A
    Tarre, A
    Gerst, A
    Adamson, P
    Sammelselg, V
    Uustare, T
    [J]. OPTICAL INORGANIC DIELECTRIC MATERIALS AND DEVICES, 1997, 2967 : 245 - 250
  • [7] Monitoring of atomic layer deposition by incremental dielectric reflection
    Rosental, A
    Adamson, P
    Gerst, A
    Niilisk, A
    [J]. APPLIED SURFACE SCIENCE, 1996, 107 : 178 - 183
  • [8] Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection
    Rosental, A
    Tarre, A
    Adamson, P
    Gerst, A
    Kasikov, A
    Niilisk, A
    [J]. APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 204 - 209
  • [9] Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection
    Rosental, A
    Adamson, P
    Gerst, A
    Koppel, H
    Tarre, A
    [J]. APPLIED SURFACE SCIENCE, 1997, 112 : 82 - 86
  • [10] TiO2 thin films by atomic layer deposition:: a case of uneven growth at low temperature
    Sammelselg, V
    Rosental, A
    Tarre, A
    Niinisto, L
    Heiskanen, K
    Ilmonen, K
    Johansson, LS
    Uustare, T
    [J]. APPLIED SURFACE SCIENCE, 1998, 134 (1-4) : 78 - 86