Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection

被引：16

作者：

Rosental, A ^{[1
]}

Tarre, A ^{[1
]}

Adamson, P ^{[1
]}

Gerst, A ^{[1
]}

Kasikov, A ^{[1
]}

Niilisk, A ^{[1
]}

机构：

[1] Tartu State Univ, Inst Phys, EE-51041 Tartu, Estonia

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

atomic layer deposition (ALD/ALE); in situ real-time reflectance measurements; TiO2 thin films;

D O I：

10.1016/S0169-4332(98)00706-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We show that the measuring of the reflectance changes in transparent systems allows one to optically characterize the surface of films growing under the conditions of atomic partial-monolayer deposition. In the model, a continuous layer with effective optical parameters describes the growth front. Growing amorphous TiO2 thin films from TiCl4 and H2O at 115 degrees C is used in demonstration experiments, (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：204 / 209

页数：6

共 6 条

[1] Born M., 1968, PRINCIPLES OPTICS
[2] KONOVALOVA OP, 1988, SOV J OPT TECHNOL+, V55, P489
[3] Atomic-layer-deposited TiO2 dielectric coatings
Rosental, A
Tarre, A
Gerst, A
Adamson, P
Sammelselg, V
Uustare, T
[J]. OPTICAL INORGANIC DIELECTRIC MATERIALS AND DEVICES, 1997, 2967 : 245 - 250
[4] Monitoring of atomic layer deposition by incremental dielectric reflection
Rosental, A
Adamson, P
Gerst, A
Niilisk, A
[J]. APPLIED SURFACE SCIENCE, 1996, 107 : 178 - 183
[5] Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection
Rosental, A
Adamson, P
Gerst, A
Koppel, H
Tarre, A
[J]. APPLIED SURFACE SCIENCE, 1997, 112 : 82 - 86
[6] Suntola T, 1994, HDB CRYSTAL GROWTH, V3, P601

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