Ultraviolet-sensitive AlGaN-based surface acoustic wave devices

被引：10

作者：

Ciplys, D ^{[1
]}

Shur, MS ^{[1
]}

Pala, N ^{[1
]}

Sereika, A ^{[1
]}

Rimeika, R ^{[1
]}

Gaska, R ^{[1
]}

Fareed, Q ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3 | 2004年

关键词：

surface acoustic waves; ultraviolet sensor; aluminum gallium nitride;

D O I：

10.1109/ICSENS.2004.1426432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two types of novel ultraviolet-sensitive III-nitride based surface acoustic wave devices are presented. We demonstrate the Al(x)Ga(I-x)N-based surface acoustic wave delay-line oscillator, which is applied as an ultraviolet sensor capable of solar-blind operation with remote wireless pickup of the output signal. Also, we report on the SA W-induced high-frequency resistance modulation effect, which is dramatically increased under ultraviolet illumination.

引用

页码：1345 / 1348

页数：4

共 8 条

[1] Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers [J].