Visible-blind photoresponse of GaN-based surface acoustic wave oscillator

We describe the photoresponse of GaN-based surface acoustic wave (SAW) delay-line oscillator operating in the 200 MHz range. The decrease in oscillator frequency under ultraviolet illumination of GaN transducer is caused by the SAW velocity decrease due to the acoustoelectronic interaction with photoconductivity electrons. The oscillator frequency shift reaches its maximum value at 365 nm and drops to zero above 400 nm with visible/ultraviolet rejection ratio more than 100. The optical quenching of the photoconductivity in GaN was observed. These results demonstrate the potential of the GaN-based SAW oscillators for applications as visible-blind remote UV sensors. (C) 2002 American Institute of Physics.