Guided elastic waves in GaN-on-sapphire

被引：14

作者：

Camou, S

Pastureaud, T

Schenk, HPD

Ballandras, S

Laude, V

机构：

[1] CNRS, UPR 3203, Lab Phys & Metrol Oscillateurs, F-25044 Besancon, France

[2] CNRS, UPR 10, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 16期

关键词：

D O I：

10.1049/el:20010668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of GaN layers deposited on a sapphire substrate for high velocity surface acoustic wave excitation is investigated, in view of passive filtering applications. The measured modal behaviour is found to comply well With numerical simulations. The measured thermal sensitivity is found to be better than -32 ppm/K.

引用

收藏

页码：1053 / 1055

页数：3

相关论文

共 9 条

[1] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[2]

Camou S, 1999, ULTRASON, P143, DOI 10.1109/ULTSYM.1999.849372

[3] Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements [J].

Deger, C ;

Born, E ;

Angerer, H ;

Ambacher, O ;

Stutzmann, M ;

Hornsteiner, J ;

Riha, E ;

Fischerauer, G .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2400-2402

[4] The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy [J].

Haffouz, S ;

Lahrèche, H ;

Vennéguès, P ;

de Mierry, P ;

Beaumont, B ;

Omnès, F ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1998, 73 (09) :1278-1280

[5]

Haffouz S, 1999, PHYS STATUS SOLIDI A, V176, P677, DOI 10.1002/(SICI)1521-396X(199911)176:1<677::AID-PSSA677>3.0.CO

[6]

2-R

[7]

Pastureaud T, 2000, ULTRASON, P293, DOI 10.1109/ULTSYM.2000.922559

[8] Elastic constants of gallium nitride [J].

Polian, A ;

Grimsditch, M ;

Grzegory, I .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) :3343-3344

[9] Elastic moduli of gallium nitride [J].

Schwarz, RB ;

Khachaturyan, K ;

Weber, ER .

APPLIED PHYSICS LETTERS, 1997, 70 (09) :1122-1124