The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

被引：71

作者：

Haffouz, S ^{[1
]}

Lahrèche, H ^{[1
]}

Vennéguès, P ^{[1
]}

de Mierry, P ^{[1
]}

Beaumont, B ^{[1
]}

Omnès, F ^{[1
]}

Gibart, P ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Appl, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we studied the effect of the high-temperature Si/N treatment of the nitridated sapphire surface followed by the deposition of a low-temperature GaN nucleation layer on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy. It was shown that the nucleation layer, initially flat and continuous, converts to wide isolated truncated hexagonal islands having {1-101} facet planes and a top (0001) plane, after heating up to 1150 degrees C. The coalescence of these GaN islands yields a reduction of the total number of extended defects from the 10(10)-10(11) cm(-2) range usually obtained down to the low 10(9) cm(-2) range for the best samples. (C) 1998 American Institute of Physics. [S0003-6951(98)04535-5].

引用

页码：1278 / 1280

页数：3

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