Inversion domains in GaN grown on sapphire

被引：189

作者：

Romano, LT ^{[1
]}

Northrup, JE ^{[1
]}

OKeefe, MA ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. (C) 1996 American Institute of Physics.

引用

页码：2394 / 2396

页数：3

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