Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics

被引：190

作者：

Huang, Tsung-Ching ^{[1
]}

Fukuda, Kenjiro ^{[2
]}

Lo, Chun-Ming ^{[3
]}

Yeh, Yung-Hui ^{[4
]}

Sekitani, Tsuyoshi ^{[5
]}

Someya, Takao ^{[5
]}

Cheng, Kwang-Ting ^{[6
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[3] Univ Calif Santa Barbara, Novel Elect Devices & Comp Syst Lab, Santa Barbara, CA 93106 USA

[4] Ind Technol Res Inst, Elect & Optoelect Res Labs, Flexible Elect Technol Div, Hsinchu 31040, Taiwan

[5] Univ Tokyo, Dept Elect & Elect Engn, Tokyo 1138656, Japan

[6] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

Digital circuits; flexible electronics; indium compounds; organic semiconductors; thin film transistors; SINGLE-CRYSTAL SILICON; TRANSISTORS; RIBBONS; POWER;

D O I：

10.1109/TED.2010.2088127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) are a key element of flexible electronics implemented on low-cost substrates. Most TFT technologies, however, have only monotype-either n- or p-type-devices. In this paper, we propose a novel design style Pseudo-CMOS for flexible electronics that uses only monotype single-V-T TFTs but has comparable performance with the complementary-type or dual-V-T designs. The manufacturing cost and complexity can therefore be significantly reduced, whereas the circuit yield and reliability are enhanced with built-in postfabrication tunability. Digital cells are fabricated in two different TFT technologies, i.e., p-type self-assembled-monolayer-organic TFTs and n-type metal-oxide InGaZnO TFTs, to validate the proposed Pseudo-CMOS design style. To the best of our knowledge, this is the first design solution that has been experimentally proven to achieve superior performance for both types of TFT technologies.

引用

页码：141 / 150

页数：10

共 29 条

[1] Printable single-crystal silicon micro/nanoscale ribbons, platelets and bars generated from bulk wafers [J].