Double quantum dots as a high sensitive submillimeter-wave detector

被引：18

作者：

Astafiev, O

Komiyama, S

Kutsuwa, T

机构：

[1] Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo 1538902, Japan

[2] Japan Sci & Technol Corp, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.1396628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single-electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/AlxGa1-xAs heterostructure crystal is demonstrated and it serves as an extremely high sensitive detector of submillimeter waves (SMMWs). One of the double dots is ionized by a SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot, yielding the photoresponse. The noise equivalent power of the detector for wavelengths of about 0.6 mm is estimated to reach the order of 10(-17) W root Hz at 70 mK. (C) 2001 American Institute of Physics.

引用

收藏

页码：1199 / 1201

页数：3

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