Effects of mechanical strain on TFTs on spherical domes

被引：27

作者：

Hsu, PHI ^{[1
]}

Huang, M ^{[1
]}

Gleskova, H ^{[1
]}

Xi, Z ^{[1
]}

Suo, Z ^{[1
]}

Wagner, S ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Ctr Photon & Optoelect Mat, POEM, Princeton, NJ 08544 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期

关键词：

amorphous semiconductors; plasma chemical vapor deposition (CVD); plastic films; thin-film transistors (TFTs);

D O I：

10.1109/TED.2003.822873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, amorphous-silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a plastic substrate, which was then permanently deformed into a spherical dome shape after the device fabrication process. The TFTs were patterned in an island structure to prevent cracking in the device films during the substrate deformation. In the majority of the TFTs, the off-current and gate leakage current do not change substantially. Depending on the island structure, the electron mobility either increased or decreased after deformation. This change in mobility was correlated with the mechanical strain in the device islands determined by finite element modeling of the deformation process. Tensile strain caused slightly higher mobility in planar structures. In a mesa-type structure, silicon films on top of the pillars could be in compression after the dome deformation, leading to a slight decrease in mobility.

引用

页码：371 / 377

页数：7

共 16 条

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