Scanning voltage microscopy on buried heterostructure multiquantum-well lasers: Identification of a diode current leakage path

被引:10
作者
Ban, D [1 ]
Sargent, EH
Dixon-Warren, SJ
Letal, G
Hinzer, K
White, JK
Knight, DG
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada
[3] Bookham Technol, Ottawa, ON K2H 8E9, Canada
[4] Trojan Technol Inc, London, ON N5V 4T7, Canada
关键词
atomic force microscopy; fault diagnosis; leakage currents; microscopy; semiconductor device breakdown; semicondoctor lasers;
D O I
10.1109/JQE.2003.821539
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report scanning voltage microscopy (SVM) results on actively driven buried heterostructure (BH) multi-quantum-well (MQW) lasers that exhibit current blocking failure at high current injection operation. The measured two-dimensional image of local voltage distribution delineates the buried structures of the BH laser. The results, in combination with light-current-voltage (L-I-V) measurements, connect macroscopic external performance to measurements on the nanometer scale. Our experimental results suggest that the current blocking breakdown observed in the MQW BH lasers correlates with the turn-on of a diode leakage path when the devices are biased at high current injection.
引用
收藏
页码:118 / 122
页数:5
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