Two-dimensional transverse cross-section nanopotentiometry of actively driven buried-heterostructure multiple-quantum-well lasers

被引:21
作者
Ban, D
Sargent, EH
Dixon-Warren, SJ
Calder, I
Grevatt, T
Knight, G
White, JK
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] Nortel Networks, Opt Components, Ottawa, ON K2H 8E9, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期
关键词
D O I
10.1116/1.1524150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report results of two-dimensional local potential measurement of the transverse cross-section of operating buried-heterostructure (BH) multiple-quantum-well lasers. The measured two-dimensional image of potential distribution resolved clearly the multiquantum-well active region and the p-n-p-n current-blocking structure of the BH laser, showing close correlation to the scanning spreading resistance microscopy image. Nanopotentiometry measurements were also performed on the p-n-p-n current-blocking structure of a BH laser under different forward bias voltages. The nanopotentiometry results provide direct insight into the behavior of p-n-p-n current-blocking layers intended to minimize current leakage. Our results demonstrate the application of nanopotentiometry to the delineation of complex buried structures in quantum optoelectronic devices. (C) 2002 American Vacuum Society.
引用
收藏
页码:2401 / 2407
页数:7
相关论文
共 33 条
[1]   Above-threshold leakage in semiconductor lasers: An analytical physical model [J].
Aarts, IMP ;
Sargent, EH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (04) :496-501
[2]   Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy [J].
Ban, D ;
Sargent, EH ;
Dixon-Warren, SJ ;
Grevatt, T ;
Knight, G ;
Pakulski, G ;
SpringThorpe, AJ ;
Streater, R ;
White, JK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05) :2126-2132
[3]   Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers [J].
Ban, DY ;
Sargent, EH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (09) :1081-1088
[4]   Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].
De Wolf, P ;
Stephenson, R ;
Trenkler, T ;
Clarysse, T ;
Hantschel, T ;
Vandevorst, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368
[5]   Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy. [J].
De Wolf, P ;
Geva, M ;
Reynolds, CL ;
Hantschel, T ;
Vandervorst, W ;
Bylsma, RB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1285-1288
[6]   One- and two-dimensional carrier profiling in semiconductors by nanospreading resistance profiling [J].
DeWolf, P ;
Clarysse, T ;
Vandervorst, W ;
Snauwaert, J ;
Hellemans, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :380-385
[7]   LATERAL AND VERTICAL DOPANT PROFILING IN SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY USING CONDUCTING TIPS [J].
DEWOLF, P ;
SNAUWAERT, J ;
HELLEMANS, L ;
CLARYSSE, T ;
VANDERVORST, W ;
DOLIESLAEGER, M ;
QUAEYHAEGENS, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1699-1704
[8]  
*DIG INSTR, 1996, EL FORC MICR SUPP NO, P230
[9]   Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure [J].
Dixon-Warren, S ;
Lu, RP ;
Ingrey, S ;
Macquistan, D ;
Bryskiewicz, T ;
Smith, G ;
Bryskiewicz, B .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04) :1752-1757
[10]   pn-junction delineation in Si devices using scanning capacitance spectroscopy [J].
Edwards, H ;
Ukraintsev, VA ;
San Martin, R ;
Johnson, FS ;
Menz, P ;
Walsh, S ;
Ashburn, S ;
Wills, KS ;
Harvey, K ;
Chang, MC .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :1485-1495