LATERAL AND VERTICAL DOPANT PROFILING IN SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY USING CONDUCTING TIPS

被引：50

作者：

DEWOLF, P

SNAUWAERT, J

HELLEMANS, L

CLARYSSE, T

VANDERVORST, W

DOLIESLAEGER, M

QUAEYHAEGENS, D

机构：

[1] KATHOLIEKE UNIV LEUVEN,DEPT CHEM,B-3001 HEVERLEE,BELGIUM

[2] IMO,B-3590 LOUVAIN,BELGIUM

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579754

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1699 / 1704

页数：6

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