COMPARISON OF CARRIER PROFILES FROM SPREADING RESISTANCE ANALYSIS AND FROM MODEL-CALCULATIONS FOR ABRUPT DOPING STRUCTURES

被引：53

作者：

CASEL, A

JORKE, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.97955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：989 / 991

页数：3

共 10 条

[1]

BRENNAN R, 1984, SOLID STATE TECHNOL, V12, P125

[2] DEPENDENCE OF HOLE TRANSPORT ON GA DOPING IN SI MOLECULAR-BEAM EPITAXY LAYERS [J].

CASEL, A ;

JORKE, H ;

KASPER, E ;

KIBBEL, H .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :922-924

[3] BETWEEN CARRIER DISTRIBUTIONS AND DOPANT ATOMIC DISTRIBUTION IN BEVELED SILICON SUBSTRATES [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1499-1510

[4] CARRIER SPILLING IN SPREADING RESISTANCE ANALYSIS OF SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

JORKE, H ;

HERZOG, HJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1735-1739

[5] DOPING BY SECONDARY IMPLANTATION [J].

JORKE, H ;

KIBBEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :774-778

[6] SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS [J].

JORKE, H ;

HERZOG, HJ ;

KIBBEL, H .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :511-513

[7]

KONIG U, 1982, 2ND INT S MBE REL CL, P193

[8]

MAZUR RG, 1966, J ELECTROCHEM SOC, V113, P225

[9]

PAWLIK M, 1986, ASTM STP, V960

[10] APPLICATION OF MULTILAYER POTENTIAL DISTRIBUTION TO SPREADING RESISTANCE CORRECTION FACTORS [J].

SCHUMANN, PA ;

GARDNER, EE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :87-&

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