CHARACTERIZATION OF A POINT-CONTACT ON SILICON USING FORCE MICROSCOPY-SUPPORTED RESISTANCE MEASUREMENTS

被引：101

作者：

DEWOLF, P

SNAUWAERT, J

CLARYSSE, T

VANDERVORST, W

HELLEMANS, L

机构：

[1] IMEC, B-3001 Leuven

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.113636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A conductive atomic force microscope (AFM) tip based on B-implanted diamond has been developed for the determination of the spatial distribution of charge carriers in semiconducting structures. The characteristics of this tip have been determined by studying the current-voltage behavior as a function of substrate resistivity and tip load. From this work a model of the electrical properties of the microcontact is emerging. It includes an Ohmic contribution to the overall resistance, which is related to the plastically deformed area, and contributions from a barrier. The tip imprints have been imaged with AFM and their physical dimensions are seen to match the requirements of the model. From resistance measurements on uniformly doped silicon a calibration curve has been established which can be used as a standard to convert measured resistance into resistivity.© 1995 American Institute of Physics.

引用

页码：1530 / 1532

页数：3

共 10 条

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