AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION

被引:351
作者
CLARKE, DR [1 ]
KROLL, MC [1 ]
KIRCHNER, PD [1 ]
COOK, RF [1 ]
HOCKEY, BJ [1 ]
机构
[1] NBS,DIV CERAM,GAITHERSBURG,MD 20899
关键词
D O I
10.1103/PhysRevLett.60.2156
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2156 / 2159
页数:4
相关论文
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