AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION

被引：351

作者：

CLARKE, DR ^{[1
]}

KROLL, MC ^{[1
]}

KIRCHNER, PD ^{[1
]}

COOK, RF ^{[1
]}

HOCKEY, BJ ^{[1
]}

机构：

[1] NBS,DIV CERAM,GAITHERSBURG,MD 20899

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.60.2156

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2156 / 2159

页数：4

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