ION-IMPLANTED DIAMOND TIP FOR A SCANNING TUNNELING MICROSCOPE

被引：41

作者：

KANEKO, R

OGUCHI, S

机构：

[1] NTT Applied Electronics Laboratories, Tokyo, 180, Musashinoshi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1990年 / 29卷 / 09期

关键词：

Atomic resolution; Diamond; Ion implant; Stm; Tip;

D O I：

10.1143/JJAP.29.1854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ion-implanted diamond tip sharpened to a radius of about 100 nm has sufficient conductivity for scanning tunneling microscopy. This tip can be used repeatedly even if it contacts the sample surface. Because the radius of the tip can be easily checked and does not show much wear from repeated usage, the relation of the tip radius to image resolution can be estimated. © 1990 The Japan Society of Applied Physics.

引用

页码：1854 / 1855

页数：2

共 3 条

[1] LOCAL MODIFICATION OF ORGANIC-DYE MATERIALS BY DIELECTRIC-BREAKDOWN
KANEKO, R
HAMADA, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1990, 8 (01): : 577 - 580
[2] SCANNING TUNNELING MICROSCOPY AND ATOMIC FORCE MICROSCOPY FOR MICROTRIBOLOGY
KANEKO, R
NONAKA, K
YASUDA, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (02): : 291 - 292
[3] DIRECT MEASUREMENT OF FORCES DURING SCANNING TUNNELING MICROSCOPE IMAGING OF GRAPHITE
MATE, CM
ERLANDSSON, R
MCCLELLAND, GM
CHIANG, S
[J]. SURFACE SCIENCE, 1989, 208 (03) : 473 - 486

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