QUANTITATIVE-ANALYSIS OF ON BEVEL ELECTRICAL JUNCTION SHIFTS DUE TO CARRIER SPILLING EFFECTS

被引：30

作者：

CLARYSSE, T ^{[1
]}

VANDERVORST, W ^{[1
]}

CASEL, A ^{[1
]}

机构：

[1] AEG,W-7900 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantitative comparison is made of the junction depths determined by spreading resistance (SR) and secondary-ion mass spectrometry (SIMS) for submicron abrupt pn junctions (grown by molecular beam epitaxy) and Gaussian implants. The discrepancies between SR and SIMS are explained in terms of carrier spilling. From the comparison with a theoretical model, general trends can be adequately explained. In order to overcome the uncertainties imposed by the boundary conditions in this model, experimental diagrams are derived which can be used in routine analysis to assess the importance of carrier spilling effects in SR.

引用

页码：2856 / 2858

页数：3

共 8 条

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