Detailed study of AlAs-oxidized apertures in VCSEL cavities for optimized modal performance

被引：40

作者：

Demeulenaere, B ^{[1
]}

Bienstman, P ^{[1
]}

Dhoedt, B ^{[1
]}

Baets, RG ^{[1
]}

机构：

[1] Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 03期

关键词：

distributed Bragg reflector lasers; laser modes; semiconductor device modeling; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/3.748841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a numerical optical model for calculating threshold material gain in vertical-cavity surface-emitting lasers. It is based on a vectorial solution of Maxwell's equations and therefore gives exact results where other approaches fail, e.g., in the case of oxide-confined devices, which have high lateral index contrasts. Results are given concerning the influence of oxide window thickness and position on threshold gain and modal stability. We also propose an intuitive plane-wave model to enhance the physical understanding of these effects.

引用

页码：358 / 367

页数：10

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