Evolution of ion and electron energy distributions in pulsed helicon plasma discharges

被引:74
作者
Conway, GD [1 ]
Perry, AJ [1 ]
Boswell, RW [1 ]
机构
[1] Australian Natl Univ, Plasma Res Lab, Canberra, ACT 0200, Australia
关键词
D O I
10.1088/0963-0252/7/3/012
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The temporal evolutions of the ion and electron energy distributions of pulsed helicon diffusion plasmas are measured. High power(tl kW) moderate length (10 ms pulses, 10% duty cycle) 13.56 MHz RF discharges show three distinct pulse phases: (a) breakdown (the first 250 mu s), characterized by high electron temperatures (>8 eV) and high ion energies (>40 eV) (b) a mid-pulse phase, which is identical to CW operation, and (c) the termination and afterglow which displays a collapsing plasma potential, splitting in ion energy peaks and a transient hot electron component (>11 eV). The hot electrons in the breakdown and termination phases are characteristic of a capacitive antenna coupling mode, while high densities and low plasma potentials of the steady-state mid-pulse phase are characteristic of an inductive/helicon wave coupling mode.
引用
收藏
页码:337 / 347
页数:11
相关论文
共 18 条
[1]  
BOHM C, 1993, REV SCI INSTRUM, V64, P31, DOI 10.1063/1.1144398
[2]   MULTIPOLE CONFINED DIFFUSION PLASMA PRODUCED BY 13.56 MHZ ELECTRODELESS SOURCE [J].
BOSWELL, RW ;
PERRY, AJ ;
EMAMI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06) :3345-3350
[3]   LARGE VOLUME, HIGH-DENSITY RF INDUCTIVELY COUPLED PLASMA [J].
BOSWELL, RW ;
PORTEOUS, RK .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1130-1132
[4]   AN EXPERIMENTAL-STUDY OF BREAKDOWN IN A PULSED HELICON PLASMA [J].
BOSWELL, RW ;
VENDER, D .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1995, 4 (04) :534-540
[5]   SIO2 DEPOSITION FROM OXYGEN SILANE PULSED HELICON DIFFUSION PLASMAS [J].
CHARLES, C ;
BOSWELL, RW ;
KUWAHARA, H .
APPLIED PHYSICS LETTERS, 1995, 67 (01) :40-42
[6]  
CONWAY GD, 1996, ANUPRLTR0296
[7]  
DEGELING AW, 1996, PHYS PLASMAS, V3, P1070
[8]   ION DISTRIBUTION-FUNCTIONS BEHIND AN RF SHEATH [J].
FLENDER, U ;
WIESEMANN, K .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (03) :509-521
[9]   DEPOSITION OF SILICON DIOXIDE FILMS USING THE HELICON DIFFUSION REACTOR FOR INTEGRATED-OPTICS APPLICATIONS [J].
GIROULTMATLAKOWSKI, G ;
CHARLES, C ;
DURANDET, A ;
BOSWELL, RW ;
ARMAND, S ;
PERSING, HM ;
PERRY, AJ ;
LLOYD, PD ;
HYDE, SR ;
BOGSANYI, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (05) :2754-2761
[10]  
HERSHKOWITZ N, 1996, COMMUNICATION