Photoluminescence enhancement and degradation in porous silicon: Evidence for nonconventional photoinduced defects

被引：10

作者：

ElHouichet, H ^{[1
]}

Oueslati, M ^{[1
]}

Bessais, B ^{[1
]}

Ezzaouia, H ^{[1
]}

机构：

[1] USI,INST NATL RECH SCI & TECH,LAB PHOTOVOLTAIQUE & MAT SEMICOND,HAMMAM LIF 2050,TUNISIA

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 71卷 / 01期

关键词：

porous silicon; photoluminescence; photoinduced defects; relaxation;

D O I：

10.1016/S0022-2313(96)00101-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report results concerning photoluminescence (PL) enhancement and degradation in fresh and oxidised porous silicon (PS). The PL evolution is explained by being based on three dissociated phenomena such as hydrogen photodesorption, photooxidation and nonconventional photocreated defects. It was found that time evolution of PL spectra depends on ambient atmosphere and PS porosity. An increase of the PL intensity followed by a degradation occurs after a short interruption of laser excitation, depending on temperature. This PL behaviour is attributed to relaxation of nonradiative recombination centres like photoinduced defects other than Si dangling bonds. It was pointed out that these photoinduced defects have a density and a relaxation time depending on laser power and temperature.

引用

页码：77 / 82

页数：6

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