Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

被引：22

作者：

Gouker, P

Burns, J

Wyatt, P

Warner, K

Austin, E

Milanowski, R

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] Dynam Res Corp, San Diego, CA USA

[3] Titan Corp, San Diego, CA 92121 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期

关键词：

fully depleted silicon-on-insulator (FDSOI); low-temperature wafer bonding; substrate and buried oxide thinning effects; total dose effects; total dose tolerance; X-ray irradiation;

D O I：

10.1109/TNS.2003.821822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.

引用

页码：1776 / 1783

页数：8

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