Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator

被引：226

作者：

Li, Jinhua ^{[1
,2
]}

Sun, Zhenhua ^{[1
,2
]}

Yan, Feng ^{[1
,2
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 01期

关键词：

organic thin film transistors; high-k gate dielectrics; relaxor ferroelectric polymers; ELECTROCHEMICAL TRANSISTORS; CHARGE-TRANSPORT; MOBILITY; DIELECTRICS; PHYSICS;

D O I：

10.1002/adma.201103542

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A relaxor ferroelectric polymer poly( vinylidene fl uoride-trifl uoroethylenechlorofl oroethylene) exhibits a high relative dielectric constant (k) (similar to 60). The high-k polymer is used successfully in solution processable low-voltage organic thin fi lm transistors (OTFTS) as the gate insulator for the fi rst time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2 V-1 s(-1) at an operating voltage of 3 V.

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页码：88 / +

页数：7

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