In-situ monitoring of surface chemistry and charge transfer at semiconductor surfaces

被引：19

作者：

Fefer, E

Kronik, L

Leibovitch, M

Shapira, Y

Riedl, W

机构：

[1] TEL AVIV UNIV,FAC ENGN,DEPT ELECT ENGN PHYS ELECTR,IL-69978 RAMAT AVIV,ISRAEL

[2] SIEMENS AG,CORP RES & DEV,ZFE T EP 2,D-80807 MUNICH,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00121-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A simple method for in-situ distinction between the effect of dipole formation/annihilation and charge transfer to/from surface gap states on the semiconductor work function is described. The technique is based on simultaneous monitoring of the work function and photovoltage at the semiconductor surface. The approach is illustrated by experiments performed on single crystalline InP(100) surfaces and polycrystalline Cu(In,Ga)Se-2.

引用

收藏

页码：61 / 67

页数：7

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