Heterostructure barrier varactors on copper substrate

被引：8

作者：

Dillner, L ^{[1
]}

Stake, J ^{[1
]}

Kollberg, EL ^{[1
]}

机构：

[1] Chalmers, Dept Microelect, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 04期

关键词：

D O I：

10.1049/el:19990255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate a fabrication process where heterostructure barrier varactor diodes are fabricated on a copper substrate which offers reduced parasitic losses and improved thermal conductivity. This has been achieved without degrading the electrical characteristics.

引用

页码：339 / 341

页数：3

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