Microscopic study of surface second-harmonic generation from a clean Si(100) c(4X2) surface -: art. no. 125303

被引：32

作者：

Arzate, N ^{[1
]}

Mendoza, BS ^{[1
]}

机构：

[1] AC Leon, Ctr Invest Opt, Guanajuato, Mexico

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.63.125303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We apply a microscopic model to calculate the different contributions to the nonlinear (second-order) susceptibility required in the calculation of second-harmonic generation (SHG). These terms are classified according to 1 omega and 2 omega transitions and to the surface or bulk character of the states among which the transitions take place. As an example, we analyze the effects of these microscopic susceptibilities on the SHG spectrum of a clean Si(100) c(4X2) surface. Three resonances seen experimentally in SHG are analyzed through this approach. They are the E-1 resonance of bulk Si at 2 omega similar to3.3 eV and two others at 2 omega similar to2.2 and 3 eV. The physical nature of the microscopic susceptibilities calculated with our formalism allows us to understand the origin of these surface SHG resonances.

引用

页数：14

共 41 条

[1] NONLINEAR-OPTICAL SUSCEPTIBILITIES OF SEMICONDUCTORS - RESULTS WITH A LENGTH-GAUGE ANALYSIS [J].