Electric field induced second harmonic generation spectroscopy on a metal-oxide-silicon structure

被引：73

作者：

Godefroy, P ^{[1
]}

deJong, W ^{[1
]}

vanHasselt, CW ^{[1
]}

Devillers, MAC ^{[1
]}

Rasing, T ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 14期

关键词：

D O I：

10.1063/1.115646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic electric-field-induced second harmonic generation on a Si(lll)-SiO2-Cr metal-oxide-silicon structure shows a bias-independent ''interface'' resonance gt 3.25 eV and a ''bulk'' resonance at 3.43 eV which is strongly bias dependent. The symmetry forbidden bulk dipole contribution becomes observable, and even dominating, due to the bias-induced band-bending that breaks the bulk inversion symmetry. The origin of these resonances is discussed, as well as the prospects for using second harmonic generation as a probe of metal-oxide-silicon characteristics. (C) 1996 American Institute of Physics.

引用

页码：1981 / 1983

页数：3

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