Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

被引:76
作者
James, RB
Brunett, B
Heffelfinger, J
Van Scyoc, J
Lund, J
Doty, FP
Lingren, CL
Olsen, R
Cross, E
Hermon, H
Yoon, H
Hilton, N
Schieber, M
Lee, EY
Toney, J
Schlesinger, TE
Goorsky, M
Yao, W
Chen, H [1 ]
Burger, A
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
[2] Univ Calif Los Angeles, Los Angeles, CA 90095 USA
[3] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
[4] Digirad, San Diego, CA 92121 USA
[5] Univ Arizona, Tucson, AZ 85724 USA
[6] Univ Nebraska, Lincoln, NE 68588 USA
[7] Fisk Univ, Nashville, TN 37208 USA
关键词
CZT; etching; gamma-ray response; internal electric fields; nuclear detectors; microstructural properties; photoluminescence; precipitates;
D O I
10.1007/s11664-998-0055-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The material showing the greatest promise today for production of large-volume gamma-ray spectrometers operable at room temperature is cadmium zinc telluride (CZT). Unfortunately, because of deficiencies in the quality of the present material, high-resolution CZT spectrometers have thus far been limited to relatively small dimensions, which makes them inefficient at detecting high photon energies and ineffective for weak radiation signals except in near proximity. To exploit CZT fully, it will be necessary to make substantial improvements in the material quality. Improving the material involves advances in the crystallinity, purity, carrier lifetimes, and control of the electrical compensation mechanism. A more detailed understanding of the underlying material problems limiting the performance of CZT gamma-ray detectors is required; otherwise, problems with supply, delivery times, and unit cost of large-volume (>5 cm(3) active volume) CZT spectrometers are expected to continue. A variety of analytical and numerical techniques have been employed to quantify crystallinity, strain, impurities, compositional and stoichiometric variations, bulk and surface defect states, carrier mobilities and lifetimes, electric field distributions, and surface passivation. Data from these measurements were correlated with spatial maps of the gamma-ray and alpha particle spectroscopic response, add feedback on the effectiveness of crystal growth and detector fabrication procedures has been generated. The results of several of these analytical techniques will be presented in this paper.
引用
收藏
页码:788 / 799
页数:12
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