Efficient 559.6 nm light produced by sum-frequency generation of diode-end-pumped Nd:YAG/SrWO4 Raman laser

被引:58
作者
Duan, Y. M. [1 ,2 ]
Zhu, H. Y. [1 ,2 ]
Zhang, G. [1 ]
Huang, C. H. [1 ]
Wei, Y. [1 ,2 ]
Tu, C. Y. [1 ]
Zhu, Z. J. [1 ]
Yang, F. G. [1 ,2 ]
You, Z. Y. [1 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
diode-pumped laser; Raman laser; yellow-green; WAVELENGTH-VERSATILE; INTRACAVITY RAMAN; FLOW-CYTOMETRY; YELLOW-LIGHT; CRYSTALS;
D O I
10.1002/lapl.201010017
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
An efficient yellow-green laser at 559.6 nm based on the sum frequency generation of diode-end-pumped Nd:YAG/SrWO4 Raman laser is demonstrated. The 45 mm in length SrWO4 crystal grown by Czochralski method and the KTP crystal with a type-II critical phase matching (theta = 83.4 degrees, phi = 0 degrees) cut were adopted for Raman conversion and sum frequency generation, respectively. The maximum average power of 2.41 W was achieved at the incident pump power of 20.4 W and the pulse repetition rate of 60 kHz. The overall diode yellow conversion efficiency was 11.8% and the slope efficiency was about 24%. The results show that the critical pump power of resonator instability is increasing with the pulse repetition rate.
引用
收藏
页码:491 / 494
页数:4
相关论文
共 24 条
[1]   Raman spectroscopy of crystals for stimulated Raman scattering [J].
Basiev, TT ;
Sobol, AA ;
Zverev, PG ;
Ivleva, LI ;
Osiko, VV ;
Powell, RC .
OPTICAL MATERIALS, 1999, 11 (04) :307-314
[2]   Raman lasers at 1.171 and 1.517 pm with self-frequency conversion in SrWO4:Nd3+ crystal [J].
Brenier, A ;
Jia, GH ;
Tu, CY .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (49) :9103-9108
[3]   High-efficiency Q-switched dual-wavelength emission at 1176 and 559 nm with intracavity Raman and sum-frequency generation [J].
Chang, Y. T. ;
Chang, H. L. ;
Su, K. W. ;
Chen, Y. F. .
OPTICS EXPRESS, 2009, 17 (14) :11892-11897
[4]   Diode side-pumped actively Q-switched Nd:YAG/SrWO4 Raman laser with high average output power of over 10 W at 1180 [J].
Chen, X. H. ;
Zhang, X. Y. ;
Wang, Q. P. ;
Li, P. ;
Li, S. T. ;
Cong, Z. H. ;
Liu, Z. J. ;
Fan, S. Z. ;
Zhang, H. J. .
LASER PHYSICS LETTERS, 2009, 6 (05) :363-366
[5]   Highly efficient diode-pumped actively Q-switched Nd:YAG-SrWO4 intracavity Raman laser [J].
Chen, Xiaohan ;
Zhang, Xingyu ;
Wang, Qingpu ;
Li, Ping ;
Li, Shutao ;
Cong, Zhenhua ;
Jia, Guohua ;
Tu, Chaoyang .
OPTICS LETTERS, 2008, 33 (07) :705-707
[6]   Continuous-wave intracavity Raman laser at 1179.5 nm with SrWO4 Raman crystal in diode-end-pumped Nd:YVO4 laser [J].
Fan, L. ;
Fan, Y. X. ;
Duan, Y. H. ;
Wang, Q. ;
Wang, H. T. ;
Jia, G. H. ;
Tu, C. Y. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 94 (04) :553-557
[7]   LD-pumped Nd:YAG/LBO 556 nm yellow laser [J].
Jia, Fu-Qiang ;
Zheng, Quan ;
Xue, Qing-Hua ;
Bu, Yi-Kun .
OPTICS AND LASER TECHNOLOGY, 2006, 38 (08) :569-572
[8]   Nanosecond Nd3+:LuVO4 self-Raman laser [J].
Kaminskii, A. A. ;
Bettinelli, M. ;
Dong, J. ;
Jaque, D. ;
Ueda, K. .
LASER PHYSICS LETTERS, 2009, 6 (05) :374-379
[9]   High efficiency nanosecond Raman lasers based on tetragonal PbWO4 crystals [J].
Kaminskii, AA ;
McCray, CL ;
Lee, HR ;
Lee, SW ;
Temple, DA ;
Chyba, TH ;
Marsh, WD ;
Barnes, JC ;
Annanenkov, AN ;
Legun, VD ;
Eichler, HJ ;
Gad, GMA ;
Ueda, K .
OPTICS COMMUNICATIONS, 2000, 183 (1-4) :277-287
[10]   Laser crystals and ceramics: recent advances [J].
Kaminskii, Alexander A. .
LASER & PHOTONICS REVIEWS, 2007, 1 (02) :93-177