Emission stability and high current performance of diamond-coated Si emitters

被引：28

作者：

Zhirnov, VV

Voronin, AB

Givargizov, EI

Meshcheryakova, AL

机构：

[1] Institute of Crystallography

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon field emitters were coated with polycrystalline diamond using the hot-filament chemical vapor deposition technique. Maximum emission currents of 300-500 mu A were achieved from single-tip emitters. Current fluctuations have been found to be between 3% and 16%. Temporal dependence of emission current was studied over 36 h at initial current of 100 mu A. At the end of the testing, the current had decreased by 20%. Diamond-coated silicon emitters demonstrated favorable emission properties, as compared with uncoated silicon emitters. (C) 1996 American Vacuum Society.

引用

页码：2034 / 2036

页数：3

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