Study on strain and piezoelectric polarization of AlN thin films grown on Si

被引:12
作者
Deng, YZ [1 ]
Kong, YC [1 ]
Zheng, YD [1 ]
Zhou, CH [1 ]
Xi, DJ [1 ]
Chen, P [1 ]
Gu, SL [1 ]
Shen, B [1 ]
Zhang, R [1 ]
Han, P [1 ]
Jiang, R [1 ]
Shi, Y [1 ]
机构
[1] Nanjing Univ, Dept Phys, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期
基金
中国国家自然科学基金;
关键词
D O I
10.1116/1.1927533
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The strain and piezoelectric polarization of AIN thin films grown on Si(111) substrates by metalorganic chemical-vapor deposition were investigated by using x-ray diffraction and Raman measurements. The stress and piezoelectric polarization of the AIN films were analyzed with E-2 (high) phonon-mode frequency shifts in Raman spectra. The result indicates that the biaxial compressive stress is about 4.3 GPa, and the piezoelectric polarization is about 1.91 X 10(-2) C/m(2). Phonons of Si-N bonds were also observed accompanying phonons of AIN crystal in Raman spectra, which indicate the interdiffusion of Si and N atoms during growth. (c) 2005 American Vacuum Society.
引用
收藏
页码:628 / 630
页数:3
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