Back-illuminated pulse-frequency-modulated photosensor using silicon-on-sapphire technology developed for use as epi-retinal prosthesis device

被引：15

作者：

Uehara, A

Kagawa, K

Tokuda, T

Ohta, J

Nunoshita, M

机构：

[1] NIDEK Co Ltd, Gamagori, Aichi 4430036, Japan

[2] Nara Inst Sci & Technol, Ikoma, Nara 6300101, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 15期

关键词：

D O I：

10.1049/el:20030742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An intra-ocular epi-retinal prosthesis device using a back-illuminated photosensor is proposed and demonstrated for the first time. The photosensor, based on a pulse frequency modulation, is fabricated on a transparent sapphire substrate to detect the backside incident light. Experimental results show that the device is sensitive over a dynamic range of incident light of 30 dB.

引用

页码：1102 / 1104

页数：3

共 6 条

[1] Pixel design of pulsed CMOS image sensor for retinal prosthesis with digital photosensitivity control [J].