Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering

被引：5

作者：

Cerqueira, HF ^{[1
]}

Stepikhova, MV

Ferreira, JA

机构：

[1] Univ Minho, Dept Phys, P-4700320 Braga, Portugal

[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期

关键词：

photoluminescence; erbium; nanocrystalline silicon;

D O I：

10.1016/S0921-5107(00)00684-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering (RBS) and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 mum with a full width at half maximum of about 8 nm. When the temperature varies between 5 and 300 K, the photoluminescence decreases only 5-fold, in contrast to the behaviour reported for monocrystalline silicon. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：32 / 35

页数：4

共 8 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].