Interface roughness localization in quantum wells and quantum wires

被引：7

作者：

Rasnik, I ^{[1
]}

Rego, LGC ^{[1
]}

Marquezini, MV ^{[1
]}

Triques, ALC ^{[1
]}

Brasil, MJSP ^{[1
]}

Brum, JA ^{[1
]}

Cotta, MA ^{[1
]}

机构：

[1] UNICAMP, DFESCM, Inst Fis, BR-13083970 Campinas, SP, Brazil

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.58.9876

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. We measured the magnetoluminescence at different temperatures and analyzed the results with a model where the average microroughness, the magnetic field, and the excitonic effects are treated within the same level of approximation. We were able to extract a quantitative estimate for the exciton localization due to microroughness. Our results also demonstrate the efficiency of the temperature to detrap excitons from the interface roughness localization. [S0163-1829(98)03439-0].

引用

页码：9876 / 9880

页数：5

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