EXCITON BINDING-ENERGY IN GAAS V-SHAPED QUANTUM WIRES

被引：128

作者：

RINALDI, R

CINGOLANI, R

LEPORE, M

FERRARA, M

CATALANO, IM

ROSSI, F

ROTA, L

MOLINARI, E

LUGLI, P

MARTI, U

MARTIN, D

MORIERGEMOUD, F

RUTERANA, P

REINHART, FK

机构：

[1] UNIV BARI,DIPARTMENTO FIS,I-70100 BARI,ITALY

[2] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[3] UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN ELETTRON,I-00173 ROME,ITALY

[4] ECOLE POLYTECH FED LAUSANNE,PHB ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.73.2899

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have determined the main parameters of the quasi-one-dimensional excitons confined in GaAs V-shaped quantum wires, namely exciton Bohr radius and binding energy, by two-photon absorption and magnetoluminescence experiments. The experimental results are in excellent agreement with our calculations, based on realistic wave functions for the actual wire geometry. © 1994 The American Physical Society.

引用

收藏

页码：2899 / 2902

页数：4

相关论文

共 16 条

[1]

[Anonymous], 1959, AM J PHYS, DOI [10.1119/1.1934950, DOI 10.1119/1.1934950]

[2] 1D CHARGE CARRIER DYNAMICS IN GAAS QUANTUM WIRES - CARRIER CAPTURE, RELAXATION, AND RECOMBINATION [J].

CHRISTEN, J ;

KAPON, E ;

GRUNDMANN, M ;

HWANG, DM ;

JOSCHKO, M ;

BIMBERG, D .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 173 (01) :307-321

[3] CATHODOLUMINESCENCE INVESTIGATION OF LATERAL CARRIER CONFINEMENT IN GAAS/ALGAAS QUANTUM WIRES GROWN BY OMCVD ON NONPLANAR SUBSTRATES [J].

CHRISTEN, J ;

KAPON, E ;

COLAS, E ;

HWANG, DM ;

SCHIAVONE, LM ;

GRUNDMANN, M ;

BIMBERG, D .

SURFACE SCIENCE, 1992, 267 (1-3) :257-262

[4] FRACTIONAL-DIMENSIONAL CALCULATION OF EXCITON BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS AND QUANTUM-WELL WIRES [J].

CHRISTOL, P ;

LEFEBVRE, P ;

MATHIEU, H .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5626-5637

[5] ELECTRONIC STATES AND OPTICAL-TRANSITIONS IN LOW-DIMENSIONAL SEMICONDUCTORS [J].

CINGOLANI, R ;

RINALDI, R .

RIVISTA DEL NUOVO CIMENTO, 1993, 16 (09) :1-85

[6] 2-PHOTON ABSORPTION IN GAAS QUANTUM WIRES [J].

CINGOLANI, R ;

LEPORE, M ;

TOMMASI, R ;

CATALANO, IM ;

LAGE, H ;

HEITMANN, D ;

PLOOG, K ;

SHIMIZU, A ;

SAKAKI, H ;

OGAWA, T .

PHYSICAL REVIEW LETTERS, 1992, 69 (08) :1276-1279

[7] OPTICAL PROCESSES IN QUANTUM-CONFINED SEMICONDUCTORS [J].

CINGOLANI, R .

PHYSICA SCRIPTA, 1993, T49B :470-475

[8] X-RAY-DIFFRACTION RECIPROCAL SPACE MAPPING OF A GAAS SURFACE GRATING [J].

GAILHANOU, M ;

BAUMBACH, T ;

MARTI, U ;

SILVA, PC ;

REINHART, FK ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1993, 62 (14) :1623-1625

[9] STIMULATED-EMISSION IN SEMICONDUCTOR QUANTUM WIRE HETEROSTRUCTURES [J].

KAPON, E ;

HWANG, DM ;

BHAT, R .

PHYSICAL REVIEW LETTERS, 1989, 63 (04) :430-433

[10] LUMINESCENCE CHARACTERISTICS OF QUANTUM WIRES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES [J].

KAPON, E ;

KASH, K ;

CLAUSEN, EM ;

HWANG, DM ;

COLAS, E .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :477-479