1D CHARGE CARRIER DYNAMICS IN GAAS QUANTUM WIRES - CARRIER CAPTURE, RELAXATION, AND RECOMBINATION

被引：19

作者：

CHRISTEN, J ^{[1
]}

KAPON, E ^{[1
]}

GRUNDMANN, M ^{[1
]}

HWANG, DM ^{[1
]}

JOSCHKO, M ^{[1
]}

BIMBERG, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS 1,W-1000 BERLIN 12,GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 173卷 / 01期

关键词：

D O I：

10.1002/pssb.2221730130

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Time- and spatially resolved luminescence of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates is reported. The effective width of these nanoscopic wires is as small as 9.5 nm, giving rise to a separation of 45 meV for the quasi-one-dimensional conduction subbands. The QWRs exhibit high luminescence efficiency and the radiative recombination lifetime of the quantum confined carriers is found to be larger than 310 ps. Combined spectral time-resolved experiments directly visualize the carrier capture process and the thermalization of the 1D carriers in the QWR structures.

引用

页码：307 / 321

页数：15

共 23 条

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