High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

被引：519

作者：

Chen, Zhuoying ^{[1
]}

Lee, Mi Jung ^{[1
]}

Ashraf, Raja Shahid ^{[2
,3
]}

Gu, Yun ^{[4
]}

Albert-Seifried, Sebastian ^{[1
]}

Nielsen, Martin Meedom ^{[5
]}

Schroeder, Bob ^{[6
]}

Anthopoulos, Thomas D. ^{[3
,7
]}

Heeney, Martin ^{[2
,3
]}

McCulloch, Iain ^{[2
,3
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England

[4] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[5] Riso DTU, Mat Res Div, DK-4000 Roskilde, Denmark

[6] Univ Libre Bruxelles, Polymer Chem Lab, B-1050 Brussels, Belgium

[7] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 05期

关键词：

field-effect transistors; polymers; ambipolar transport; solution processing; ambipolar devices; CHARGE-TRANSPORT; POLYMER; DEPENDENCE; MORPHOLOGY;

D O I：

10.1002/adma.201102786

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm(2) V-1 s(-1) are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

引用

页码：647 / +

页数：7

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