WNx diffusion barriers between Si and Cu

被引：131

作者：

Uekubo, M

Oku, T

Nii, K

Murakami, M

Takahiro, K

Yamaguchi, S

Nakano, T

Ohta, T

机构：

[1] KYOTO UNIV,DEPT MAT SCI & ENGN,SAKYO KU,KYOTO 60601,JAPAN

[2] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 98077,JAPAN

[3] KAWASAKI STEEL CHEM IND CO LTD,LSI DIV,ADV TECHNOL RES SECT,CHIBA 260,JAPAN

来源：

THIN SOLID FILMS | 1996年 / 286卷 / 1-2期

关键词：

copper; diffusion; nitrides; silicon;

D O I：

10.1016/S0040-6090(96)08553-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The barrier properties of W, W2N and WN layers to prevent intermixing of Cu wiring with the Si substrate were investigated. W, W2N and WN barrier layers 25 nm thick were found to prevent intermixing after annealing at 650, 790 and 500 degrees C for 30 min, respectively. W2N, which showed the best barrier property, had a polycrystalline structure with disordered gain boundaries, and Cu diffusion in W2N was concluded to be controlled by grain boundaries of the W2N layer based on the diffusional analysis of Cu in W2N.

引用

页码：170 / 175

页数：6

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