Metal-induced gap states at well defined alkali-halide/metal interfaces

被引:30
作者
Kiguchi, M [1 ]
Arita, R
Yoshikawa, G
Tanida, Y
Katayama, M
Saiki, K
Koma, A
Aoki, H
机构
[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan
[2] Univ Tokyo, Grad Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[3] Univ Tokyo, Grad Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan
[4] Fujitsu Labs Ltd, Kanagawa 2430197, Japan
关键词
D O I
10.1103/PhysRevLett.90.196803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In order to search for states specific to insulator/metal interfaces, we have studied epitaxially grown interfaces with element-selective near edge x-ray absorption fine structure. An extra peak is observed below the bulk edge onset for LiCl films on Cu and Ag substrates. The nature of chemical bonds as probed by x-ray photoemission spectroscopy and Auger electron spectroscopy remains unchanged, so we regard this as evidence for metal-induced gap states (MIGS) formed by the proximity to a metal, rather than local bonds at the interface. The dependence on the film thickness shows that the MIGS are as thin as one monolayer. An ab initio electronic structure calculation supports the existence of the MIGS that are strongly localized at the interface.
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页数:4
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