Identification of the possible in poly(3-hexylthiophene) thin defect states films

被引:13
作者
Feng, D.-Q. [1 ]
Caruso, A. N.
Losovyj, Y. B.
Shulz, D. L.
Dowben, P. A.
机构
[1] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
[2] N Dakota State Univ, Ctr Nanoscale Sci & Engn, Fargo, ND 58102 USA
[3] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70806 USA
关键词
D O I
10.1002/pen.20820
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
The possible origins of a low density of defect states within the highest occupied molecular orbital to lowest unoccupied molecular orbital gap are suggested for regioregular poly(3-hexylthiophene). A number of 'chemical' defects, impurities, and structural defects could contribute to features in photoemission for regioregular poly(3-hexylthiophene), observed within the highest occupied molecular orbital to lowest unoccupied molecular orbital gap of regioregular poly(3-hexylthiophene).
引用
收藏
页码:1359 / 1364
页数:6
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