The effect of pulsed magnetron sputtering on the properties of indium tin oxide thin films

被引:23
作者
Hwang, MS
Lee, HJ
Jeong, HS
Seo, YW
Kwon, SJ
机构
[1] ITM Inc, Dongan Ku, Anyang 431060, Kyunggi Do, South Korea
[2] Kyungwon Univ, Sujung Ku, Songnam 462701, Kyunggi Do, South Korea
关键词
transparent conducting oxide; indium tin oxide; pulsed magnetron sputtering; surface morphology;
D O I
10.1016/S0257-8972(03)00231-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Flat panel displays based on flexible plastic substrates have received a lot of spotlights for their applications in mobile devices. However, it has been difficult to deposit high quality transparent conducting oxide thin films on plastic substrates due to their high process temperature. In this study we report on the properties of indium tin oxide (ITO) thin films prepared by DC and pulsed magnetron sputtering at low temperature. The ITO films were deposited on soda-lime glass substrates at low substrate temperatures of 70 and 120 degreesC. The electrical, structural, optical, and surface properties of the films prepared by DC and pulse magnetron sputtering were compared. We discuss the role of the pulse power in determining ITO thin film properties that are important in flat panel display applications. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:29 / 33
页数:5
相关论文
共 6 条
[1]  
CHANG S, 2002, J KOREAN I ELEECT EL, V15, P13
[2]   Development of conductive transparent indium tin oxide (ITO) thin films deposited by direct current (DC) magnetron sputtering for photon-STM applications [J].
Deng, W ;
Ohgi, T ;
Nejo, H ;
Fujita, D .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (05) :595-601
[3]   Influence of substrate temperature and sputtering atmosphere on electrical and optical properties of double silver layer systems [J].
Klöppel, A ;
Meyer, B ;
Trube, J .
THIN SOLID FILMS, 2001, 392 (02) :311-314
[4]   Pulsed dc magnetron-sputtering of microcrystalline silicon [J].
Reinig, P ;
Alex, V ;
Fenske, F ;
Fuhs, W ;
Selle, B .
THIN SOLID FILMS, 2002, 403 :86-90
[5]  
YANG HS, 2000, P 7 INT DISPL WORKSH, P889
[6]   Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature [J].
Zhang, K ;
Zhu, FR ;
Huan, CHA ;
Wee, ATS .
THIN SOLID FILMS, 2000, 376 (1-2) :255-263