Optical studies of thermally activated vertical hole transport in ZnCdSe/ZnSSe superlattice

被引:7
作者
Lebedev, A
Sorokin, S
Toropov, A
Shubina, T
Il'inskaya, N
Nekrutkina, O
Ivanov, S
Pozina, G
Bergman, P
Monemar, B
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Linkoping Univ, S-58183 Linkoping, Sweden
关键词
D O I
10.12693/APhysPolA.94.421
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Miniband transport in alternatively-strained ZnCdSe/ZnSSe short period superlattices is investigated using a structure with an enlarged quantum well. Temperature dependences of time-resolved and continuous wave photoluminescence have been measured, demonstrating an efficient temperature-induced vertical hole transport. A quantitative description is given for the carrier kinetics in these structures.
引用
收藏
页码:421 / 426
页数:6
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