Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

被引：20

作者：

Doggett, B. ^{[1
]}

Chakrabarti, S. ^{[1
]}

O'Haire, R. ^{[1
]}

Meaney, A. ^{[1
]}

McGlynn, E. ^{[1
]}

Henry, M. O. ^{[1
]}

Mosnier, J. P. ^{[1
]}

机构：

[1] Dublin City Univ, Natl Ctr Plasma Sci & Technol, Sch Phys Sci, Dublin 9, Ireland

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

基金：

爱尔兰科学基金会;

关键词：

ZnO; phosphorus-doped ZnO; p-type doping ZnO; pulsed laser deposition; hall effect;

D O I：

10.1016/j.spmi.2007.04.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P2O5-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Omega cm, a Hall mobility of mu(n) similar to 0.5 cm(2) V-1 s(-1) and a carrier concentration of n similar to 3 x 10(17) cm(-3) at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：74 / 78

页数：5