Thermal and molecular stresses in multi-layered structures of nitride devices

Mechanical stresses considerably influence the operation of nitride devices because of stress-related effective masses, band gaps and piezoelectric phenomena, to name the most important effects. However, even the most advanced models of those devices rarely contain mechanical parts, mostly because of their complexity and time-consuming numerical calculation procedures. In the present paper, a new analytical mechanical model of nitride devices is presented which enables simple determination of stress fields in their multi-layered volume. The validity of the model has been confirmed by comparing its results with those obtained with the aid of rigorous numerical finite-element calculations.