Mechanism of metal-carbenoid insertion into the Si-H bond

被引：43

作者：

Landais, Y

ParraRapado, L

Planchenault, D

Weber, V

机构：

[1] Institut De Chimie Organique, Université De Lausanne, Collége Propédeutique

来源：

TETRAHEDRON LETTERS | 1997年 / 38卷 / 02期

关键词：

D O I：

10.1016/S0040-4039(96)02285-X

中图分类号：

O62 [有机化学];

学科分类号：

070303 ; 081704 ;

摘要：

Kinetic investigations on the insertion of metal-carbenoid intermediates into the SI-H bond have been carried out. A kinetic isotope effect of 1.5 was found and the plot of log k(X)/k(H) vs sigma for the reaction of arylsilanes with EDA, gave a straight line with rho = -0.31. It was thus concluded that the insertion proceeds through a concerted pathway with development of a small positive charge at the silicon centre and it relatively early transition state. Copyright (C) 1996 Elsevier Science Ltd

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页码：229 / 232

页数：4

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