Fabrication of semiconductor- and polymer-based photonic crystals using nanoimprint lithography

被引:14
作者
Arakcheeva, EM
Tanklevskaya, EM
Nesterov, SI
Maksimov, MV
Gurevich, SA
Seekamp, J
Torres, CMS
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Wuppertal, Dept Elect & Informat Engn, Inst Mat Sci, D-42097 Wuppertal, Germany
关键词
GaAs; Methacrylate; Polymethyl Methacrylate; Photonic Crystal; Side Wall;
D O I
10.1134/1.2014536
中图分类号
O59 [应用物理学];
学科分类号
摘要
The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One- and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithography and reactive ion etching. The period of 2D photonic crystals, which present a square array of holes, ranges from 270 to 700 nm; the aperture diameter amounts to the half-period of the structure. The holes are round-shaped with even edges. One- dimensional GaAs-based photonic crystals are fabricated by reactive ion etching of GaAs to a depth of 1 m m through a mask formed using nanoimprint lithography. The resulting crystals have a period of 800 nm, a ridge width of 200 nm, and smooth nearly vertical side walls. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码:1043 / 1047
页数:5
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