Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN

被引：34

作者：

Okamoto, K ^{[1
]}

Scherer, A

Kawakami, Y

机构：

[1] CALTECH, Dept Phys, Pasadena, CA 91125 USA

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 16期

关键词：

D O I：

10.1063/1.2105999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaN/GaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 24 条

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