Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

被引：52

作者：

Kaneta, A ^{[1
]}

Mutoh, T

Kawakami, Y

Fujita, S

Marutsuki, G

Narukawa, Y

Mukai, T

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

[2] Nichia Corp, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 17期

关键词：

D O I：

10.1063/1.1620677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Precise identification of recombination dynamics based on local, radiative, and nonradiative recombination has been achieved at room temperature in a blue-light-emitting InxGa1-xN/GaN single-quantum-well structure by comparing the photoluminescence (PL) spectra taken by illumination-collection mode (I-C mode) and those by illumination mode (I-mode) in scanning near-field microscopy. The PL data mapped with PL lifetimes, as well as with PL spectra, revealed that the probed area could be classified into four different regions whose dominating processes are (1) radiative recombination within a probing aperture, (2) nonradiative recombination within an aperture, (3) diffusion of photogenerated excitons/carriers out of an aperture resulting in localized luminescence, and (4) the same diffusion process as (3), but resulting in nonradiative recombination. (C) 2003 American Institute of Physics.

引用

页码：3462 / 3464

页数：3

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